FFM201G ffm202g ffm203g 50 100 200 35 70 140 symbols v rrm (v) v rms v r (v) (v) *1 *2 *3 *1 repetitive peak reverse voltage *2 rms voltage *3 continuous reverse voltage *4 maximum forward voltage@i =2.0a f *5 maximum reverse recovery time, note 1 v f (v) *4 ffm204g ffm205g 400 600 280 420 1.30 -55 to +150 ffm206g ffm207g 800 1000 560 700 parameter conditions forward rectified current forward surge current reverse current thermal resistance diode junction capacitance storage temperature see fig.1 8.3ms single half sine-wave superimposed on rate load (jedec methode) f=1mhz and applied 4v dc reverse voltage symbol min. typ. max. unit i o i fsm i r r ja c j t stg a a a o c/w o c pf 2.0 50 5.0 +175 -65 35 v = v t = 25 c r rrm j o v = v t = 125 c r rrm j o junction to ambient 40 100 t rr (ns) *5 150 250 500 50 100 200 400 600 800 1000 (c) o operating temperature t, j 0.196(4.9) 0.180(4.5) 0.012(0.3) typ. 0.106(2.7) 0.091(2.3) 0.068(1.7) 0.060(1.5) 0.032 (0.8) typ. 0.032(0.8) typ. note 1. reverse recovery time test condition, i =0.5a, i =1.0a, i =0.25a frrr FFM201G thru ffm207g chip silicon rectifier 2.0a fast recovery rectifiers-50-1000v batch process design, excellent power dissipation offers ? better reverse leakage current and thermal resistance. low profile surface mounted application in order to optimize board space. ? ? high current capability. ? fast switching for high efficiency. ? high surge current capability. ? glass passivated chip junction. ? lead- free parts meet rohs requirments. ? suffix "-h" indicates halogen-free parts, ex. ffm201-mg-h. features mechanical data ? epoxy: ul94-v0 rated frame retardant ? case: molded plastic, jedec do-214ac / sma ? terminals: solder plated, solderable per mil-std-750, method 2026 ? polarity: lndicated by cathode band ? mounting position: any ? weight: approximated 0.05 gram sma package outline dimensions in inches and (millimeters) maximum ratings (at t =25 a o c unless otherwise noted) page 1/2 @ 2010 copyright by american first semiconductor
0.2 2.0 .02 20 rating and characteristic curves fig.1-typical forward characteristics fig.2-typical forward current derating curve average for ward current ,(a) fig.5-typical junction capacitance reverse voltage,(v) junction cap acitance,(pf) instantaneous for ward current ,(a) forward voltage,(v) pulse width 300us 1% duty cycle 0.4 0.8 1.2 1.6 2.0 2.4 70 60 50 40 30 20 10 0 (+) (+) 25vdc (approx.) ( ) ( ) pulse generator (note 2) oscilliscope (note 1) 1 non- inductive notes: 1. rise time= 7ns max., input impedance= 1 megohm.22pf. 2. rise time= 10ns max., source impedance= 50 ohms. +0.5a 0 -0.25a -1.0a | | | | | | | | 1cm set time base for 50 / 10ns / cm trr .01 .05 .1 .5 1 5 10 50 100 d.u.t. .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 6.0 ambient temperature ( c) fig.3- test circuit diagram and reverse recovery time characteristics 10 noninductive 50 noninductive t =25 c j fig.4-maximum non-repetitive forward surge current peak for waard surge current ,(a) 10 0 20 30 40 50 number of cycles at 60hz 110 5 50 100 t =25 c j 8.3ms single half sine wave jedec method single phase half wave 60hz resistive or inductive load 0 20 40 60 80 100 120 140 160 180 200 0 FFM201G thru ffm207g page 2/2 www.first-semi.com
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